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Y₂O₃ Ceramic yttrium oxide powder semiconductor

Item No.: PZ- 6035
Y₂O₃ high purity ceramic yttria powder
Purity: 99.95%
Condensation and sintering
 Type of powder material 
  Y₂O₃ ceramic yttria powder  semiconductor  spherical
 brand (PZ)
 PZ- 6035A
  specifications (um)
 –53 +15     –106 +16
 Performance and application
 Plasma etch and erosion resistance on surfaces exposed  to reactive plasma gases in semiconductor manufacturing 
systems, such as vacuum chamber walls and other components
 Electrostatic chucks
 Linings for graphite molds

Typical chemical composition
Y₂0₃ 99.5
Fe₂0₃ <0.1%
Al₂0₃ <0.1%
Ca0 <0.1%
Si0₂ < 0.1%

Spray parameters
 Plasmagenerator   F4 
Plasma Gas Ar(SLPM) 42
Plasma Gas H₂(SLPM) 11
Current(A) 550
Spray Distnce(mm) 120


Coating Properties

Hardness:approx.1400 HV 0.3                Applicable up to 2.200℃

The product application